Category

SiC Schottky Rectifiers

GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for voltage ratings of 1200 V - 10 kV. Significant advantages of these devices are:Low Leakage Currents, high current capability using high volume production process,Lower capacitance as compared to competing rectifier technologies  .Inherently superior high temperature capability and reliability.
IGBT + SiC Rectifier Copack

IGBT + SiC Rectifier Copack


GeneSiC has develped a line hybrid Silicon and Silicon Carbide IGBT copacks and modules. We use the
SiC Schottky Rectifiers

SiC Schottky Rectifiers


GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for volta
SiC Thyristors

SiC Thyristors


Bipolar devices like SiC based Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC
SOT-227

SOT-227


Genesic semiconductor  commercial  silicon  carbide  SOT-227.
Super Junction Transistors

Super Junction Transistors


GeneSiC is offering and continuously improving a new innovative power device, the Silicon Carbide "S
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